My Patents:

1	U.S. Patent 4,492,971	Metal Silicide-Silicon Heterostructures, J.C. Bean, K.C.R. Chiu and J.M. Poate
2	U.S. Patent 4,514,748	Germanium P-I-N Photodetector on Silicon Substrate, J.C. Bean, A. Kastalsky and S. Lury
3	U.S. Patent 4,529,455	Method for Epitaxially Growing Ge(x)Si(1-x) Layers on Si Utilizing Molecular Beam Epitaxy, J.C. Bean, L.C. Feldman and A.T. Fiory
4	U.S. Patent 4,554,045	Method for Producing Metal Silicide-Silicon Heterostructures, J.C. Bean, K.C. R. Chiu and J.M. Poate
5	U.S. Patent 4,661,829 U.S. Patent RE33,693	Device Using Ordered Semiconductor Alloy, J.C. Bean and A. Ourmazd
6	U.S. Patent 4,681,773	Apparatus for Simultaneous Molecular Beam Deposition on a Plurality of Substrates, J.C. Bean
7	U.S. Patent 4,725,870	Silicon Germanium Photodetector, J.C. Bean, S. Luryi, and T.P. Pearsall
8	U.S. Patent 4,772,924	Device Having Strain Induced Region of Altered Bandgap, J.C. Bean, D.V. Lang, T.P. Pearsall, R.People, and H. Temkin
9	U.S. Patent 4,861,393	Semiconductor Heterostructures Having Ge(x)Si(1-x) Layers on Silicon Utilizing Molecular Beam Epitaxy, J.C. Bean, L.C. Feldman and A.T. Fiory
10	U.S. Patent 4,879,256	Method of Controlling the Order-Disorder State in a Semiconductor Device. J.C. Bean and A. Ourmazd
11	U.S. Patent 5,091,767	Article Comprising a Lattice-Mismatched Semiconductor Heterostructure. J.C. Bean, G.S. Higashi, R. Hull and L. Peticolas
12	U.S. Patent 5,096,840	Method of Making a Poliysilicon Emitter Bipolar Transistor. J.C. Bean, G.S. Higashi and B. Jalali-Farahani
13	U.S. Patent 5,134,090	Method of Fabricating Patterned Epitaxial Silicon Films Utilizing Molecular Beam Epitaxy, J.C. Bean and G.A. Rozgonyi
14	U.S. Patent 5,244,749	Article Comprising an Epitaxial Multilayer Mirror, J.C. Bean and D.L. Windt
15	U.S. Patent 10,297,707	Thin Film Photovoltaic Cell System and Method of Manufacture, T. Globus, P.P. Marshall, B. Gelmont, L. Harriott, N. Alijabbari, J.C. Bean and J.C. Campbell

Copyright: John C. Bean