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Virtual Lab: Minilab Overview
 University of Virginia
             
           
© 2003-Present, John C. Bean
 
This is the first of two furnaces. In this furnace SiO2 layers are formed by cooking the silicon wafers, at temperatures as high as 1100°C, in an atmosphere containing O2 or H20.

Wafers are loaded into a quartz wafer boat, and the boat moved into the furnace with a push rod. The bulk of the furnace is taken up by the heating coils. These are driven to the desired oxidation temperature using three closed-loop proportional-integral-differential (PID) controllers.
 
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